EML LASER DIODE

High-Speed Precision

50 Gb/s bitrate with 13 dBm power
Optimized for PON networks
Next-Gen Optical Solutions

High-Speed Laser Diode for Broadband Access

The EML Laser Diode is a cutting-edge photonic chip-based product designed for Passive Optical Networks (PON). This laser diode offers high launch power and data rates, achieving 13 dBm output power and supporting up to 50 Gb/s bitrate. With its advanced design, the EML Laser Diode ensures reliable, high-speed broadband access for multiple endpoints in fiber-optic PON networks.

Combining a directly modulated Distributed Feedback (DFB) laser diode for high output power and an integrated Electro-Absorption Modulator (EAM) for high-speed modulation, this solution sets a new standard for optical communication performance.

50

Data rate capacity

13

High output power

1340

Wavelength range

75

Max operating temp

Summary

The EML Laser Diode is a versatile, high-performance component for fiber-optic PON networks. Its compact Chip-on-Carrier (CoC) design integrates a DFB laser diode and an EAM modulator, eliminating the need for an external SOA. This reduces complexity while maintaining excellent performance.

With a focus on reliability, the diode operates across a wide temperature range and includes features like impedance matching for seamless integration. Its scalable design supports other wavelength ranges, making it adaptable to future needs.

Capabilities
Summary

The EML Laser Diode is tailored for high-speed, high-power optical communication applications. It supports robust and scalable deployment in PON networks, delivering exceptional performance for broadband connectivity

Applications by Technology:
Applications by Market:
Technical Specifications of the EML Laser Diode
Parameter Range/Value Units
Output Power 13 dBm
Data Rate 50 Gb/s
Wavelength 1340–1344 nm
Operating Temperature 0 to 75 °C
Threshold Current 35 mA
Operating Current 50 to 120 mA
Bandwidth 35 GHz
Side-Mode Suppression Ratio 35 dB
Extinction Ratio (Static) 9 dB
Extinction Ratio (Dynamic) 6 dB
Power Specifications
Parameter Range/Value Units
Reverse Voltage 2 V
Forward Current 150 mA
Modular Voltage -3.5 to 1 V
Physical Dimensions
Parameter Details Units
Package Type Chip-on-Carrier (CoC) -
Far-Field Angle 20 Horizontal / 26 Vertical Degrees
Linewidth 0.03 nm

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