Next-Gen Optical Solutions
High-Speed Laser Diode for Broadband Access
The EML Laser Diode is a cutting-edge photonic chip-based product designed for Passive Optical Networks (PON). This laser diode offers high launch power and data rates, achieving 13 dBm output power and supporting up to 50 Gb/s bitrate. With its advanced design, the EML Laser Diode ensures reliable, high-speed broadband access for multiple endpoints in fiber-optic PON networks.
Combining a directly modulated Distributed Feedback (DFB) laser diode for high output power and an integrated Electro-Absorption Modulator (EAM) for high-speed modulation, this solution sets a new standard for optical communication performance.
Data rate capacity
High output power
Wavelength range
Max operating temp
Summary
The EML Laser Diode is a versatile, high-performance component for fiber-optic PON networks. Its compact Chip-on-Carrier (CoC) design integrates a DFB laser diode and an EAM modulator, eliminating the need for an external SOA. This reduces complexity while maintaining excellent performance.
With a focus on reliability, the diode operates across a wide temperature range and includes features like impedance matching for seamless integration. Its scalable design supports other wavelength ranges, making it adaptable to future needs.
Capabilities
- High Output Power: Achieves 13 dBm for robust signal strength
- High-Speed Modulation: Supports data rates up to 50 Gb/s
- Extinction Ratio: Ensures 9 dB static and 6 dB dynamic ratios for clarity
- Wide Temperature Range: Operates from 0°C to 75°C reliably
- Wavelength Stability: Operates at 1340–1344 nm with excellent suppression ratios
Summary
The EML Laser Diode is tailored for high-speed, high-power optical communication applications. It supports robust and scalable deployment in PON networks, delivering exceptional performance for broadband connectivity
Applications by Technology:
- Photonics: Advanced light-based communication for optical networks
- High-Speed Networking: Supports 50 Gb/s for next-gen broadband
- Integrated Modulation: Combines DFB laser and EAM for compact performance
Applications by Market:
- Telecom: Enhanced broadband connectivity for end-users
- Smart Cities: High-speed data transmission for smart infrastructure
- Data Centers: High-power optical communication for efficient data transfer
- Industry: Scalable solutions for optical communication networks
- Research: Photonic components for high-performance studies
| Technical Specifications of the EML Laser Diode | ||
|---|---|---|
| Parameter | Range/Value | Units |
| Output Power | 13 | dBm |
| Data Rate | 50 | Gb/s |
| Wavelength | 1340–1344 | nm |
| Operating Temperature | 0 to 75 | °C |
| Threshold Current | 35 | mA |
| Operating Current | 50 to 120 | mA |
| Bandwidth | 35 | GHz |
| Side-Mode Suppression Ratio | 35 | dB |
| Extinction Ratio (Static) | 9 | dB |
| Extinction Ratio (Dynamic) | 6 | dB |
| Power Specifications | ||
|---|---|---|
| Parameter | Range/Value | Units |
| Reverse Voltage | 2 | V |
| Forward Current | 150 | mA |
| Modular Voltage | -3.5 to 1 | V |
| Physical Dimensions | ||
|---|---|---|
| Parameter | Details | Units |
| Package Type | Chip-on-Carrier (CoC) | - |
| Far-Field Angle | 20 Horizontal / 26 Vertical | Degrees |
| Linewidth | 0.03 | nm |